I. Khan

activity

20062022

most citedWide band gap chalcogenide semiconductors

514 citations · 536 across the 7 of their papers we have counts for

collaborators

Showing 2020Show all

3 papers · 1 filter

cond-mat.mes-hall2020

Spectrum of Landau Levels in GaAs Quantum Wells

Imran Khan, Bipin Singh Koranga, Sunil Kumar

We have studied the optical and electrical spectra from an n i p LED as a function of magnetic field. This sample incorporated three GaAs quantum wells in the intrinsic region. Thi…

cond-mat.mtrl-sci2020★ 1 cited

$M g_{x} Z n_{1 - x} O$ contact to $C u G a_{3} S e_{5}$ absorber for photovoltaic and photoelectrochemical devices

Imran S. Khan, Christopher P. Muzzillo, Craig L. Perkins +4

$C u G a_{3} S e_{5}$ is a promising candidate material with wide band gap for top cells in tandem photovoltaic (PV) and photoelectrochemical (PEC) devices. However, traditional CdS contact…

physics.app-ph2020★ 10 cited

Growth and Characterization of Homoepitaxial $β$ -Ga $_{2}$ O $_{3}$ Layers

M. Brooks Tellekamp, Karen N. Heinselman, Steve Harvey +2

$β$ -Ga $_{2}$ O $_{3}$ is a next-generation ultra wide bandgap semiconductor (E $_{g}$ = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generatio…

Spectrum of Landau Levels in GaAs Quantum Wells

Mgx​Zn1−x​O contact to CuGa3​Se5​ absorber for photovoltaic and photoelectrochemical devices

Growth and Characterization of Homoepitaxial β-Ga2​O3​ Layers

$M g_{x} Z n_{1 - x} O$ contact to $C u G a_{3} S e_{5}$ absorber for photovoltaic and photoelectrochemical devices

Growth and Characterization of Homoepitaxial $β$ -Ga $_{2}$ O $_{3}$ Layers