Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits

Abstract

Epitaxially-grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices and may even allow scalable superconducting quantum computing with low-surface-area qubits such as the merged-element transmon. In this work, we measure the power-independent loss and two-level-state (TLS) loss of epitaxial, wafer-bonded, and substrate-removed Al/GaAs/Al trilayers by measuring lumped element superconducting microwave resonators at millikelvin temperatures and down to single photon powers. The power-independent loss of the device is $(4.8\pm 0.1)\times 10^{-5}$ and resonator-induced intrinsic TLS loss is $(6.4\pm 0.2)\times 10^{-5}$. Dielectric loss extraction is used to determine a lower bound of the intrinsic TLS loss of the trilayer of $7.2\times 10^{-5}$. The unusually high power-independent loss is attributed to GaAs's intrinsic piezoelectricity.

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• An analysis method for asymmetric resonator transmission applied to superconducting devices
• Materials loss measurements using superconducting microwave resonators
• Noise and loss of superconducting aluminium resonators at single photon energies
• Merged-element transmon
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• Superconductivity in hyperdoped Ge by molecular beam epitaxy
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