Electromagnetic dressing of the electron energy spectrum of Au(111) at high momenta
arXiv:2009.00256 · doi:10.1103/PhysRevB.102.161403
Abstract
Light-engineering of quantum materials via electromagnetic dressing is considered an on-demand approach for tailoring electronic band dispersions and even inducing topological phase transitions. For probing such dressed bands, photoemission spectroscopy is an ideal tool, and we employ here a novel experiment based on ultrafast photoemission momentum microscopy. Using this setup, we measure the in-plane momentum-dependent intensity fingerprints of the electromagnetically-dressed sidebands from a Au(111) surface for s- and p-polarized infrared driving. We find that at metal surfaces, due to screening of the driving laser, the contribution from Floquet-Bloch bands is negligible, and the dressed bands are dominated by the laser-assisted photoelectric effect. Also, we find that in contrast to general expectations, s-polarized light can dress free-electron states at large photoelectron momenta. Our results show that the dielectric response of the material must carefully be taken into account when using photoemission for the identification of light-engineered electronic band structures.
19 pages: 6 pages letter with 4 figures, 13 pages SI with 5 figures
References in corpus (5)
- Direct Determination of Band Gap Renormalization in Photo-Excited Monolayer MoS2
- Monitoring in real time the photon-dressing and undressing of quasiparticles from first principles time-resolved photoelectron spectroscopy
- Time-Resolved Momentum Microscopy with a 1 MHz High-Harmonic Extreme Ultraviolet Beamline
- Floquet states in dissipative open quantum systems
- Efficient orbital imaging based on ultrafast momentum microscopy and sparsity-driven phase retrieval
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