Concomitant enhancement of electron-phonon coupling and electron-electron interaction in graphene decorated with ytterbium
arXiv:2007.09387 · doi:10.1016/j.apsusc.2018.10.134
Abstract
The interplay between electron-electron interaction and electron-phonon coupling has been one of the key issues in graphene as it can provide information on the origin of enhanced electron-phonon coupling in graphene by foreign atoms. In ytterbium-decorated graphene on SiC substrate, electron-phonon coupling exhibits strong enhancement compared to that of as-grown graphene. Based on angle-resolved photoemission study, the presence of ytterbium is also found to result in the decrease of Fermi velocity, revealing the enhancement of electron-electron interaction within the Fermi liquid theory. Our finding on the concomitant enhancement of electron-electron interaction and electron-phonon coupling suggests a possibility of the interplay between the two representative many-body interactions in graphene decorated with foreign atoms.
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References in corpus (10)
- Fermi velocity engineering in graphene by substrate modification
- Origins of anomalous electronic structures of epitaxial graphene on silicon carbide
- Metal to insulator transition in epitaxial graphene induced by molecular doping
- Fermi surface and quasiparticle dynamics of Na(x)CoO2 {x=0.7} investigated by Angle-Resolved Photoemission Spectroscopy
- Electron-phonon coupling and electron self-energy in electron-doped graphene: calculation of angular resolved photoemission spectra
- Interplay of Coulomb and electron-phonon interactions in graphene
- Kohn anomaly and interplay of electron-electron and electron-phonon interactions in epitaxial graphene
- Electronic structure of heavily-doped graphene: the role of foreign atom states
- Van Hove Singularity and Apparent Anisotropy in the Electron-Phonon Interaction in Graphene
- Ytterbium-driven strong enhancement of electron-phonon coupling in graphene