Determining the Rashba parameter from the bilinear magnetoresistance response in a two-dimensional electron gas

Abstract

Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is expanding. Conventionally, demanding techniques such as angle- and spin-resolved photoemission spectroscopy are required to determine the Rashba parameter ${\alpha }_R$ that characterizes these systems. Here, we introduce a simple method that allows a quantitative extraction of ${\alpha }_R$, through the analysis of the bilinear response of angle-dependent magnetotransport experiments. This method is based on the modulation of the Rashba-split bands under a rotating in-plane magnetic field. We show that our method is able to correctly yield the value of ${\alpha }_R$ for a wide range of Fermi energies in the 2D electron gas at the LaAlO${}_3$/SrTiO${}_3$ interface. By applying a gate voltage, we observe a maximum ${\alpha }_R$ in the region of the band structure where interband effects maximize the Rashba effect, consistently with theoretical predictions.

References in corpus (3)

• Graphene Spintronics
• Emergent Phenomena Induced by Spin-Orbit Coupling at Surfaces and Interfaces
• Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures

Cited by in corpus (4)

• Direct visualization of Rashba-split bands and spin/orbital-charge interconversion at KTaO${}_3$ interfaces
• Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states
• Nonreciprocal transport in a Rashba ferromagnet, delafossite PdCoO${}_2$
• Spin to charge conversion at Rashba-split SrTiO${}_3$ interfaces from resonant tunneling