Characterization of a Silicon Drift Detector for High-Resolution Electron Spectroscopy
arXiv:2006.13851 · doi:10.1016/j.nima.2020.164474
Abstract
Silicon Drift Detectors, widely employed in high-resolution and high-rate X-ray applications, are considered here with interest also for electron detection. The accurate measurement of the tritium beta decay is the core of the TRISTAN (TRitium Investigation on STerile to Active Neutrino mixing) project. This work presents the characterization of a single-pixel SDD detector with a mono-energetic electron beam obtained from a Scanning Electron Microscope. The suitability of the SDD to detect electrons, in the energy range spanning from few keV to tens of keV, is demonstrated. Experimental measurements reveal a strong effect of the detector's entrance window structure on the observed energy response. A detailed detector model is therefore necessary to reconstruct the spectrum of an unknown beta-decay source.
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Cited by in corpus (10)
- KATRIN: Status and Prospects for the Neutrino Mass and Beyond
- Characterization of Silicon Drift Detectors with Electrons for the TRISTAN Project
- Array of Cryogenic Calorimeters to Evaluate the Spectral Shape of forbidden -decays: the ACCESS project
- Detection of Low-Energy Electrons with Transition-Edge Sensors
- Development of cryogenic calorimeters to measure the spectral shape of In-115 beta decay
- Precision pulse shape simulation for proton detection at the Nab experiment
- A thermionic electron gun to characterize silicon drift detectors with electrons
- Investigation of Electron Backscattering on Silicon Drift Detectors for the Sterile Neutrino Search with TRISTAN
- Measurement of the C spectrum with Silicon Drift Detectors: towards the study of forbidden transitions
- Characterization of Low-energy Ionization Signals in Silicon Detectors for the Nab Experiment