Temperature-Dependent Resistivity of Alternative Metal Thin Films

Abstract

The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bulk-like TCR values that are rather independent of the thickness whereas the TCR of Cu increases strongly with decreasing thickness. Thin W films show negative TCR values, which can be linked to high disorder. The results are qualitatively consistent with a temperature-dependent semiclassical thin film resistivity model that takes into account phonon, surface, and grain boundary scattering.

11 pages, 4 figures

References in corpus (4)

• Thickness dependence of the resistivity of Platinum group metal thin films
• The origin of Mooij correlations in disordered metals
• On the extraction of resistivity and area of nanoscale interconnect lines by temperature-dependent resistance measurements
• Temperature Dependent Behavior of Thermal Conductivity of Sub-5 nm Ir film: Defect-electron Scattering Quantified by Residual Thermal Resistivity