223 citations · 279 across the 7 of their papers we have counts for
7 papers
Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab
Jerome Mitard, Luka Kljucar, Nouredine Rassoul +19
Back and double gate IGZO nFETs have been demonstrated down to 120nm and 70nm respectively leveraging 300mm fab processing. While the passivation of oxygen vacancies in IGZO is cha…
Scaling NbTiN-based ac-powered Josephson digital to 400M devices/cm
Anna Herr, Quentin Herr, Steve Brebels +9
We describe a fabrication stackup for digital logic with 16 superconducting NbTiN layers, self-shunted a-silicon barrier Josephson Junctions (JJs), and low loss, high- tunable H…
Ab initio screening of metallic MAX ceramics for advanced interconnect applications
Kiroubanand Sankaran, Kristof Moors, Zsolt Tőkei +2
The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using…
Temperature-Dependent Resistivity of Alternative Metal Thin Films
Marco Siniscalchi, Davide Tierno, Kristof Moors +2
The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bu…
Comprehensive Modeling of Graphene Resistivity
Antonino Contino, Ivan Ciofi, Xiangyu Wu +5
Since the first graphene layer was fabricated in the early 2000's, graphene properties have been studied extensively both experimentally and theoretically. However, when comparing…
Thickness dependence of the resistivity of Platinum group metal thin films
Shibesh Dutta, Kiroubanand Sankaran, Kristof Moors +6
We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknes…
Electron relaxation times and resistivity in metallic nanowires due to tilted grain boundary planes
Kristof Moors, Bart Sorée, Zsolt Tokei +1
We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzm…