Ultrafast antiferromagnetic switching in NiO induced by spin transfer torques

Abstract

NiO is a prototypical antiferromagnet with a characteristic resonance frequency in the THz range. From atomistic spin dynamics simulations that take into account the crystallographic structure of NiO, and in particular a magnetic anisotropy respecting its symmetry, we describe antiferromagnetic switching at THz frequency by a spin transfer torque mechanism. Sub-picosecond S-state switching between the six allowed stable spin directions is found for reasonably achievable spin currents, like those generated by laser induced ultrafast demagnetization. A simple procedure for picosecond writing of a six-state memory is described, thus opening the possibility to speed up current logic of electronic devices by several orders of magnitude.

arXiv comment8 pages, 11 figures

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Cited by in corpus (10)

• Antiferromagnetic insulatronics: spintronics in insulating 3d metal oxides with antiferromagnetic coupling
• Néel-Vector Switching and THz Spin-Wave Excitation in Mn${}_2$Au due to Femtosecond Spin-Transfer Torques
• Order parameter dynamics in Mn${}_3$Sn driven by DC and pulsed spin-orbit torques
• Magnetic order-dependent giant tunneling magnetoresistance and electroresistance in van der Waals antiferromagnetic-multiferroic tunnel junctions
• Laser-induced Creation of antiferromagnetic 180-degree domains in NiO/Pt bilayers
• Parametrically driven THz magnon-pairs: predictions towards ultimately fast and minimally dissipative switching
• Threshold current of field-free perpendicular magnetization switching using anomalous spin-orbit torque
• Temperature-dependent critical spin-orbit field for orthogonal switching in antiferromagnets
• Orthogonal Spin-Orbit Torque-Induced Deterministic Switching in NiO
• Fast reversal of Néel vectors in antiferromagnets via domain-wall motion driven by vertically injected spin currents