Coexistence of Surface Ferromagnetism and Gapless Topological State in MnBiTe
arXiv:2004.06895 · doi:10.1103/PhysRevLett.125.117205
Abstract
Surface magnetism and its correlation with the electronic structure are critical to understand the gapless topological surface state in the intrinsic magnetic topological insulator MnBiTe. Here, using static and time resolved angle-resolved photoemission spectroscopy (ARPES), we find a significant ARPES intensity change together with a gap opening on a Rashba-like conduction band. Comparison with a model simulation strongly indicates that the surface magnetism on cleaved MnBiTe is the same as its bulk state. The coexistence of surface ferromagnetism and a gapless TSS uncovers the novel complexity of MnBiTe that may be responsible for the low quantum anomalous Hall temperature of exfoliated MnBiTe.
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Cited by in corpus (12)
- Axion Electrodynamics in Topological Materials
- Sample-dependent Dirac point gap in MnBiTe and its response to the applied surface charge: a combined photoemission and ab initio study
- Routes to realize the axion-insulator phase in MnBiTe(BiTe) family: a perspective
- Light-Tunable Surface State and Hybridization Gap in Magnetic Topological Insulator MnBiTe
- Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi2Te4 via Surface Modification
- Nonreciprocal transport in a bilayer of MnBi2Te4 and Pt
- Intrinsic magnetic topological insulators of the MnBiTe family
- Observation of magnetism induced topological edge state in antiferromagnetic topological insulator MnBi4Te7
- Facet dependent surface energy gap on magnetic topological insulators
- Absence of a Dirac gap in ferromagnetic Cr(BiSb)Te
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