Correlating surface stoichiometry and termination in SrTiO${}_3$ films grown by hybrid molecular beam epitaxy

Abstract

Hybrid oxide molecular beam epitaxy (hMBE), a thin-film deposition technique in which transition metal cations are delivered using a metal-organic precursor, has emerged as the state-of-the-art approach to the synthesis of electronic-grade complex oxide films with a stoichiometric growth window. However, numerous questions remain regarding the chemical mechanisms of the growth process and the surface properties of the resulting films. To examine these properties, thin film SrTiO${}_3$ (STO) was prepared by hMBE using a titanium tetraisopropoxide (TTIP) precursor for Ti delivery and an elemental Sr source on annealed STO and Nb-doped STO substrates with varying TTIP:Sr flux ratios to examine the conditions for the reported stoichiometric growth window. The films were transferred in vacuo to an x-ray photoelectron spectroscopy system to study the surface elemental composition. Samples were examined using x-ray diffraction to compare our surface sensitive results with previously reported measurements of the bulk of the films in the literature. Ex situ studies by atomic force microscopy, scanning tunneling microscopy and low energy electron microscopy confirmed the presence of surface reconstructions and an Ehrlich-Schwoebel barrier consistent with an A-site SrO termination. We find that a surface exhibiting a mixture of SrO and TiO${}_2$ termination, or a full SrO termination is necessary to obtain stoichiometric adsorption-controlled growth. These results indicate that surface Sr is necessary to maintain chemical equilibrium for stoichiometric growth during the hMBE process, which is important for the design of future interfacial systems using this technique.

arXiv comment37 pages, 6 figures, 10 supplemental figures

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Cited by in corpus (5)

• Probing Emergent Surface and Interfacial Properties in Complex Oxides via in situ X-ray Photoelectron Spectroscopy
• Advances in Complex Oxide Quantum Materials Through New Approaches to Molecular Beam Epitaxy
• Enabling two-dimensional electron gas with high room-temperature electron mobility exceeding 100 cm${}^2$/Vs at a perovskite oxide interface
• Strain Effects in SrHfO${}_3$ Films Grown by Hybrid Molecular Beam Epitaxy
• Surface Stability of SrNbO${}_{3+\delta }$ Grown by Hybrid Molecular Beam Epitaxy