Interface structure, band alignment and built-in potentials at LaFeO/-SrTiO heterojunctions
arXiv:1610.08113 · doi:10.1103/PhysRevLett.117.226802
Abstract
Interface structure at polar/non-polar interfaces has been shown to be a key factor in controlling emergent behavior in oxide heterostructures, including the LaFeO/-SrTiO system. We demonstrate via high energy resolution x-ray photoemission that epitaxial LaFeO/-SrTiO (001) heterojunctions engineered to have opposite interface polarities exhibit very similar band offsets and potential gradients within the LaFeO films. However, differences in the potential gradient within the SrTiO layer depending on polarity may promote hole diffusion into LaFeO for applications in photocatalysis.
10 pages, 3 figures; supplemental info: 6 pages, 3 figures
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- Probing the polar-nonpolar oxide interfaces using resonant x-ray standing wave techniques