Interface structure, band alignment and built-in potentials at LaFeO${}_3$/$\text{n}$-SrTiO${}_3$ heterojunctions

Abstract

Interface structure at polar/non-polar interfaces has been shown to be a key factor in controlling emergent behavior in oxide heterostructures, including the LaFeO${}_3$/$\text{n}$-SrTiO${}_3$ system. We demonstrate via high energy resolution x-ray photoemission that epitaxial LaFeO${}_3$/$\text{n}$-SrTiO${}_3$ (001) heterojunctions engineered to have opposite interface polarities exhibit very similar band offsets and potential gradients within the LaFeO${}_3$ films. However, differences in the potential gradient within the SrTiO${}_3$ layer depending on polarity may promote hole diffusion into LaFeO${}_3$ for applications in photocatalysis.

10 pages, 3 figures; supplemental info: 6 pages, 3 figures

References in corpus (1)

• Electronic reconstruction at the isopolar LaTiO3/LaFeO3 interface: An x-ray photoemission and density functional theory study

Cited by in corpus (1)

• Band alignment and charge transfer in complex oxide interfaces