Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers

Abstract

Spin transport at metallic interfaces is an essential ingredient of various spintronic device concepts, such as giant magnetoresistance, spin-transfer torque, and spin pumping. Spin-orbit coupling plays an important role in many such devices. In particular, spin current is partially absorbed at the interface due to spin-orbit coupling. We develop a general magnetoelectronic circuit theory and generalize the concept of the spin mixing conductance, accounting for various mechanisms responsible for spin-flip scattering. For the special case when exchange interactions dominate, we give a simple expression for the spin mixing conductance in terms of the contributions responsible for spin relaxation (i.e., spin memory loss), spin torque, and spin precession. The spin-memory loss parameter $\delta$ is related to spin-flip transmission and reflection probabilities. There is no straightforward relation between spin torque and spin memory loss. We calculate the spin-flip scattering rates for N|N, F|N, F|F interfaces using the Landauer-Büttiker method within the linear muffin-tin orbital method and determine the values of $\delta$ using circuit theory.

arXiv comment12 pages, 4 figures

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Cited by in corpus (8)

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• Effect of interfacial intermixing on spin-orbit torque in Co/Pt bilayers
• Spin superfluidity in noncollinear antiferromagnets
• Calculating interface transport parameters at finite temperatures: Nonmagnetic interfaces
• Spin-circuit representation of spin-torque ferromagnetic resonance
• Angle-Dependent Magnetoresistance Induced by Interface-Generated Spin Current in RuO${}_2$/Permalloy Heterostructures