Exciton-polariton interference controlled by electric field
arXiv:2003.04120 · doi:10.1103/PhysRevResearch.2.033510
Abstract
Linear in the wave-vector terms of an electron Hamiltonian play an important role in topological insulators and spintronic devices. Here we demonstrate how an external electric field controls the magnitude of a linear-in-K term in the exciton Hamiltonian in wide GaAs quantum wells. The dependence of this term on the applied field in a high quality sample was studied by means of the differential reflection spectroscopy. An excellent agreement between the experimental data and the results of calculations using semi-classical non-local dielectric response model confirms the validity of the method and paves the way for the realisation of excitonic Datta-and-Das transistors. In full analogy with the spin-orbit transistor proposed by Datta and Das [Appl. Phys. Lett. {\bf 56}, 665 (1990)], the switch between positive and negative interference of exciton polaritons propagating forward and backward in a GaAs film is achieved by application of an electric field with non-zero component in the plane of the quantum well layer.
30 pages, 6 figures
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Cited by in corpus (4)
- Controllable Bistability and Squeezing of Confined Polariton Dark Solitons
- Effect of electric field on excitons in wide quantum wells
- Magneto-optical induced supermode switching in quantum fluids of light
- Linewidths and energy shifts of the electron-impurity resonant states in quantum wells with infinite barriers