Decrease of heavy-hole exciton mass induced by uniaxial stress in GaAs/AlGaAs quantum well
arXiv:1505.02105 · doi:10.1002/pssb.201552735
Abstract
It is experimentally shown that the pressure applied along the twofold symmetry axis of a heterostructure with a wide GaAs/AlGaAs quantum well leads to considerable modification of the polariton reflectance spectra. This effect is treated as the stress-induced decrease of the heavy-hole exciton mass. Theoretical modeling of the effect supports this assumption. The 5\%-decrease of the exciton mass is obtained at pressure P=0.23 GPa.
6 pages, 5 figures
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