Doubly-charged silicon vacancy center, photochromism, and Si-N complexes in co-doped diamond

Abstract

We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a silicon-vacancy complex decorated with a nearest-neighbor nitrogen, SiVN, supported by theoretical calculations. Samples containing silicon and nitrogen are shown to be heavily photochromic, with the dominant visible changes due to the loss of SiV0/- and gain in the optically-inactive SiV2-.

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Cited by in corpus (5)

• Electronic structure and magneto-optical properties of silicon-nitrogen-vacancy complexes in diamond
• Room-temperature photo-chromism of silicon vacancy centers in CVD diamond
• Photo-induced charge state dynamics of the neutral and negatively charged silicon vacancy centers in room-temperature diamond
• Probing NV and SiV charge state dynamics using high-voltage nanosecond pulse and photoluminescence spectral analysis
• Probing charge dynamics in diamond with an individual color center