358 citations · 542 across the 9 of their papers we have counts for
9 papers
Reevaluating the electrical impact of atomic carbon impurities in MoS2
James Ramsey, Faiza Alhamed, Jonathan P. Goss +2
Transition metal dichalcogenides, a family of two-dimensional compounds, are of interest for a range of technological applications. MoS2, the most researched member of this family,…
Doubly-charged silicon vacancy center, photochromism, and Si-N complexes in co-doped diamond
B G Breeze, C J Meara, X X Wu +13
We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribut…
Electronic structure modification of Si-nanocrystals with F4 -TCNQ
A. Carvalho, J. Coutinho, M. Barroso +4
We use first-principles models to demonstrate how an organic oxidizing agent, F4 -TCNQ (7,7,8,8- tetracyano-2,3,5,6-tetrafluoroquinodimethane), modifies the electronic structure of…
Mechanical properties of nanosheets and nanotubes investigated using a new geometry independent volume definition
Philipp Wagner, Viktoria V. Ivanovskaya, Mark J. Rayson +2
Cross-sectional area and volume become difficult to define as material dimensions approach the atomic scale. This limits the transferability of macroscopic concepts such as Young's…
Doping of Si nanoparticles: the effect of oxidation
A. Carvalho, S. Oberg, M. Barroso +2
The preferred location of boron and phosphorus in oxidized free-standing Si nanoparticles was investigated using a first-principles density functional approach. The calculated form…
Electronic properties, doping and defects in chlorinated silicon nanocrystals
A. Carvalho, S. Öberg, M. J. Rayson +1
Silicon nanocrystals with diameters between 1 and 3 nm and surfaces passivated by chlorine or a mixture of chlorine and hydrogen were modeled using density functional theory, and t…