Extraordinary magnetoresistance in encapsulated monolayer graphene devices

Abstract

We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride, having metallic edge contacts and a central metal shunt. Extremely large EMR values, $MR=(R(B)-R_0)/R_0\sim 10^5$, are achieved in part because $R_0$ approaches or crosses zero as a function of the gate voltage, exceeding that achieved in high mobility bulk semiconductor devices. We highlight the sensitivity, $dR/dB$, which in two-terminal measurements is the highest yet reported for EMR devices, and in particular exceeds prior results in graphene-based devices by a factor of 20. An asymmetry in the zero-field transport is traced to the presence of $pn$-junctions at the graphene-metal shunt interface.

References in corpus (4)

• Electric Field Effect in Atomically Thin Carbon Films
• Boron nitride substrates for high-quality graphene electronics
• Doping graphene with metal contacts
• Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

Cited by in corpus (1)

• Strong magnetoresistance in a graphene Corbino disk at low magnetic fields