Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots

Abstract

We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low filling numbers, where tunneling rates are rather controlled by the axial configuration of the electron orbital. Transmission rates versus filling are further modified by acting on the radial configuration of the orbitals by means of electrostatic gating, and the barrier transparency for the various orbitals is found to evolve as expected from numerical simulations. The possibility to exploit this mechanism to achieve a controlled continuous tuning of the tunneling rate of an individual Coulomb blockade resonance is discussed.

7 pages, 5 figures, plus SI

References in corpus (8)

• Majorana bound states in a coupled quantum-dot hybrid-nanowire system
• Tunable Supercurrent Through Semiconductor Nanowires
• Tunable effective g-factor in InAs nanowire quantum dots
• Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots
• Spectroscopy of the superconducting proximity effect in nanowires using integrated quantum dots
• Singlet-Triplet Transition Tuned by Asymmetric Gate Voltages in a Quantum Ring
• Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots
• Heat flow in InAs/InP heterostructure nanowires

Cited by in corpus (2)

• Quantum-dot single-electron transistor as thermoelectric quantum detectors at terahertz frequencies
• Spectroscopy of the local density-of-states in nanowires using integrated quantum dots