80 citations · 131 across the 8 of their papers we have counts for
8 papers
Magnetically Induced Switching-Current Jumps in InAs/Al Josephson Junctions
Ofelia Durante, Roberta Citro, Elia Strambini +8
We report Barkhausen-like switching at millitesla fields in an -doped InAs/Al nanowire Josephson junction, which serves as an interferometric probe of intrinsic magnetic reconfi…
InAs Nanowire-Based Twin Electrical Sensors enabling Simultaneous Gas Detection Measurements: Nanodevice Engineering, Testing and Signal Fluctuation Analysis
Camilla Baratto, Egit Musaev, Valeria Demontis +6
Epitaxially grown InAs NWs are relevant for electrical sensing applications due to Fermi level pinning at NW surface, thus very sensitive to surrounding environment. While a single…
Engineering nanowire quantum dots with iontronics
Domenic Prete, Valeria Demontis, Valentina Zannier +3
Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are g…
Giant reduction of thermal conductivity in twinning superlattice InAsSb nanowires
Lorenzo Peri, Domenic Prete, Valeria Demontis +5
Semiconductor nanostructures hold great promise for high-efficiency waste heat recovery exploiting thermoelectric energy conversion, a technological breakthrough that could signifi…
Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots
Zahra Sadre Momtaz, Stefano Servino, Valeria Demontis +7
We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated th…
Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots
Samuele Cornia, Francesco Rossella, Valeria Demontis +5
With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external sti…
Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots
Domenic Prete, Paolo Andrea Erdman, Valeria Demontis +7
We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G…
Ionic liquid gating of InAs nanowire-based field effect transistors
Johanna Lieb, Valeria Demontis, Daniele Ercolani +6
We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transco…