First-order magnetic phase-transition of mobile electrons in monolayer MoS${}_2$

Abstract

Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS${}_2$. The phase boundary separates a spin-polarised (ferromagnetic) phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the voltage applied to the gate electrode of the device. Accompanying the change in magnetism is a large change in the electron effective mass.

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• Giant effective Zeeman splitting in a monolayer semiconductor realized by spin-selective strong light-matter coupling
• Anisotropic, two-dimensional, disordered Wigner solid
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• Spontaneous valley polarization of interacting carriers in a monolayer semiconductor
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• Valley-Filling Instability and Critical Magnetic Field for Interaction-Enhanced Zeeman Response in Doped WSe${}_2$ Monolayers
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• Magnetic field induced modification of a first-order ferromagnetic transition in Eu2In