Resonant photovoltaic effect in doped magnetic semiconductors

Abstract

The rectified non-linear response of a clean undoped semiconductor to an AC electric field includes a well known intrinsic contribution -- the shift current. We show that when Kramers degeneracy is broken, a distinct second order rectified response appears that is due to Bloch state anomalous velocities in a system with an oscillating Fermi surface. This effect, which we refer to as the resonant photovoltaic effect (RPE), produces a resonant galvanic current peak at the interband absorption threshold in doped semiconductors or semimetals with approximate particle-hole symmetry. We evaluate the RPE for a model of the surface states of a magnetized topological insulator.

References in corpus (13)

• Topological response in Weyl semimetals and the chiral anomaly
• Weyl Semimetals, Fermi Arcs and Chiral Anomalies (A Short Review)
• The Berry curvature dipole in Weyl semimetal materials: an ab initio study
• Tunable Casimir repulsion with three dimensional topological insulators
• Nonlinear spin current generation in noncentrosymmetric spin-orbit coupled systems
• Gyrotropic Hall effect in Berry-curved materials
• Shift charge and spin photocurrents in Dirac surface states of topological insulator
• Second-order nonlinear optical response of graphene
• Photocurrents in gyrotropic Weyl semimetals
• High-frequency nonlinear transport and photogalvanic effects in two-dimensional topological insulators
• Enhanced photogalvanic effect in graphene due to Rashba spin-orbit coupling
• Ultrafast shift and rectification photocurrents in GaAs quantum wells: Excitation intensity dependence and the importance of bandmixing
• Anisotropic Excitons and their Contributions to Shift Current Transients in Bulk GaAs