Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

Abstract

Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS2 contacts is found to be +28.8 meV (zero-bias), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS2 contact. With the application of gate voltage (+10 V), SBH shows a drastic reduction down to a value of -6.8 meV. The negative SBH reveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS2 based spintronics and therefore using directly grown MoS2 channels in the present study can pave a path towards high performance devices for large scale applications.

16 pages, 4 figures, 1 table and Supplementary Materials

References in corpus (8)

• Electric Field Effect in Atomically Thin Carbon Films
• Atomically thin MoS2: A new direct-gap semiconductor
• Graphene Spintronics
• Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals
• High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
• Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
• Controllable Schottky Barriers between MoS2 and Permalloy
• Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

Cited by in corpus (4)

• Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-pinning of van der Waals Contacts
• Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
• Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts
• Field-effect at electrical contacts to two-dimensional materials