Controllable pn junctions in threedimensional Dirac semimetal CdAs nanowires
arXiv:1909.04353 · doi:10.1088/1361-6528/ab6dfe
Abstract
We demonstrate a controllable pn junction in a threedimensional Dirac semimetal (DSM) CdAs nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (nn and pp) regime and the bipolar (np and np) one, where pn junctions are formed. The conductance in the pn junction regime decreases drastically when a magnetic field is applied perpendicular to the nanowire, which is due to the suppression of Klein tunneling. In this regime, the device shows quantum dot behavior. On the other hand, clear conductance plateaus are observed in the nn regime likely owing to the cyclotron motion of carriers at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.
References in corpus (30)
- Weyl and Dirac Semimetals in Three Dimensional Solids
- Chiral tunneling and the Klein paradox in graphene
- Discovery of a Three-dimensional Topological Dirac Semimetal, Na3Bi
- Dirac semimetal and topological phase transitions in A3Bi (A=Na, K, Rb)
- Dirac semimetal in three dimensions
- Three Dimensional Dirac Semimetal and Quantum Transports in Cd3As2
- Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal CdAs
- Observation of a topological 3D Dirac semimetal phase in high-mobility Cd3As2
- Experimental Realization of a Three-Dimensional Dirac Semimetal
- Quantum interference and Klein tunneling in graphene heterojunctions
- Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP
- Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
- Landau Quantization and Quasiparticle Interference in the Three-Dimensional Dirac Semimetal Cd3As2
- Negative Magnetoresistance in Dirac Semimetal Cd3As2
- Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires
- Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2
- Electron optics with ballistic graphene junctions
- Large linear magnetoresistance in Dirac semi-metal Cd3As2 with Fermi surfaces close to the Dirac points
- Ballistic interferences in suspended graphene
- Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals NaBi and GdPtBi
- Observation of the quantum Hall effect in confined films of the three-dimensional Dirac semimetal Cd3As2
- Quantum Hall states observed in thin films of Dirac semimetal Cd3As2
- Aharonov-Bohm oscillations in Dirac semimetal Cd3As2 nanowires
- Evolution of Weyl orbit and quantum Hall effect in Dirac semimetal Cd3As2
- Snake Trajectories in Ultraclean Graphene p-n Junctions
- Conductance oscillations induced by ballistic snake states in a graphene heterojunction
- Signatures of interaction-induced helical gaps in nanowire quantum point contacts
- Gate-tuned quantum Hall states in Dirac semimetal (Cd1-xZnx)3As2
- Quantized surface transport in topological Dirac semimetal films
- Quantum dots formed in three-dimensional Dirac semimetal CdAs nanowires