Effective Floquet Hamiltonian in the low-frequency regime

Abstract

We develop a theory to derive effective Floquet Hamiltonians in the weak drive and low-frequency regime. We construct the theory in analogy with band theory for electrons in a spatially-periodic and weak potential, such as occurs in some crystalline materials. As a prototypical example, we apply this theory to graphene driven by circularly polarized light of low intensity. We find an analytic expression for the effective Floquet Hamiltonian in the low-frequency regime which accurately predicts the quasienergy spectrum and the Floquet states. Furthermore, we identify self-consistency as the crucial feature effective Hamiltonians in this regime need to satisfy to achieve a high accuracy. The method is useful in providing a realistic description of off-resonant drives for multi-band solid state systems where light-induced topological band structure changes are sought.

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Cited by in corpus (5)

• Floquet engineering of twisted double bilayer graphene
• Floquet-engineering topological transitions in a twisted transition metal dichalcogenide homobilayer
• Light-induced bound electron states in two-dimensional systems: Contribution to electron transport
• Floquet boundary states in AB-stacked graphite
• Low-frequency and Moiré Floquet engineering: a review