Ultra-low dissipation patterned silicon nanowire arrays for scanning probe microscopy
arXiv:1909.03035 · doi:10.1021/acs.nanolett.9b03668
Abstract
In recent years, self-assembled semiconductor nanowires have been successfully used as ultra-sensitive cantilevers in a number of unique scanning probe microscopy (SPM) settings. We describe the fabrication of ultra-low dissipation patterned silicon nanowire (SiNW) arrays optimized for scanning probe applications. Our fabrication process produces, with high yield, ultra-high aspect ratio vertical SiNWs that exhibit exceptional force sensitivity. The highest sensitivity SiNWs have thermomechanical-noise limited force sensitivity of at room temperature and at 4 K. To facilitate their use in SPM, the SiNWs are patterned within from the edge of the substrate, allowing convenient optical access for displacement detection.
arXiv commentMain text: 16 pages, 3 figures and 2 tables. Supplements: 11 pages, 7 figures and 1 table
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