Stacking transition in rhombohedral graphite

Abstract

Few layer graphene (FLG) has been recently intensively investigated for its variable electronic properties defined by a local atomic arrangement. While the most natural layers arrangement in FLG is ABA (Bernal) stacking, a metastable ABC (rhombohedral) stacking characterized by a relatively high energy barrier can also occur. When both stacking occur in the same FLG device this results in in-plane heterostructure with a domain wall (DW). We show that ABC stacking in FLG can be controllably and locally turned into ABA stacking by two following approaches. In the first approach, Joule heating was introduced and the transition was characterized by 2D-peak Raman spectra at a submicron spatial resolution. The observed transition was initiated at a small region and then the DW controllably shifted until the entire device became ABA stacked. In the second approach, the transition was achieved by illuminating the ABC region with a train of laser pulses of 790 nm wavelength, while the transition was visualized by transmission electron microscopy in both diffraction and dark field modes. Also, with this approach, a DW was visualized in the dark-field imaging mode, at a nanoscale spatial resolution.

References in corpus (15)

• Observation of an electrically tunable band gap in trilayer graphene
• Topological confinement in bilayer graphene
• Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
• Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene
• Dependence of band structures on stacking and field in layered graphene
• Domain walls in gapped graphene
• Interlayer screening effect in graphene multilayers with ABA and ABC stacking
• Electron and optical phonon temperatures in electrically biased graphene
• Laser-Induced Skyrmion Writing and Erasing in an Ultrafast Cryo-Lorentz Transmission Electron Microscopy
• Direct observation of optically induced transient structures in graphite using ultrafast electron crystallography
• Stacking boundaries and transport in bilayer graphene
• Graphene hot-electron light bulb: incandescence from hBN-encapsulated graphene in air
• The Raman fingerprint of rhombohedral graphite
• Imaging Stacking Order in Few-Layer Graphene
• Observation of Chirality Transition of Quasiparticles at Stacking Solitons in Trilayer Graphene

Cited by in corpus (14)

• Stacking Order in Graphite Films Controlled by Van der Waals Technology
• Mixed-Stacking Few-Layer Graphene as an Elemental Weak Ferroelectric Material
• Synthesis of large-area rhombohedral few-layer graphene by chemical vapor deposition on copper
• Spectroscopic Signatures of Electronic Excitations in Raman Scattering in Thin Films of Rhombohedral Graphite
• Exchange interaction, disorder, and stacking faults in rhombohedral graphene multilayers
• Effect of biaxial strain and hydrostatic pressure on the magnetic properties of bilayer CrI3
• Imaging Stacking-Dependent Surface Plasmon Polaritons in Trilayer Graphene
• Stacking control in graphene-based materials: a promising way for fascinating physical properties
• Identification of graphite with perfect rhombohedral stacking by electronic Raman scattering
• Solitons induced by an in-plane magnetic field in rhombohedral multilayer graphene
• Films of rhombohedral graphite as two-dimensional topological semimetals
• Solitons in binary compounds with stacked two-dimensional honeycomb lattices
• Correlations in randomly stacked solids
• Untangling 3D atomic reconstruction in twisted bilayer 2D crystals via dark field transmission electron microscopy