The study of intrinsic defect state of FeSe with scanning tunneling microscopy

Abstract

We apply high resolution scanning tunneling microscopy to study intrinsic defect states of bulk FeSe. Four types of intrinsic defects including the type I dumbbell, type II dumbbell, top-layer Se vacancy and inner-layer Se-site defect are extensively analyzed by scanning tunneling spectroscopy. From characterized depression and enhancement of density of states measured in a large energy range, the type I dumbbell and type II dumbbell are determined to be the Fe vacancy and Se${}_{\mathrm{Fe}}$ defect, respectively. The top-layer Se vacancy and possible inner-layer Se-site vacancy are also determined by spectroscopy analysis. The determination of defects are compared and largely confirmed in the annular dark-field scanning transmission electron microscopy measurement of the exfoliated FeSe. The detailed mapping of defect states in our experiment lays the foundation for a comparison with complex theoretical calculations in the future.

15 pages, 4 figures

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• Scanning tunneling spectroscopy of high-temperature superconductors
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Cited by in corpus (3)

• FeSe and the missing electron pocket problem
• Charge order driven by multiple-Q spin fluctuations in heavily electron-doped iron selenide superconductors
• Stoichiometry and defect superstructures in epitaxial FeSe films on SrTiO3