Visualization of electronic topology in ZrSiSe by scanning tunneling microscopy

Abstract

As emerging topological nodal-line semimetals, the family of ZrSiX (X = O, S, Se, Te) has attracted broad interests in condensed matter physics due to their future applications in spintonics. Here, we apply a scanning tunneling microscopy (STM) to study the structural symmetry and electronic topology of ZrSiSe. The glide mirror symmetry is verified by quantifying the lattice structure of the ZrSe bilayer based on bias selective topographies. The quasiparticle interference analysis is used to identify the band structure of ZrSiSe. The nodal line is experimentally determined at $\sim$ 250 meV above the Fermi level. An extra surface state Dirac point at $\sim$ 400 meV below the Fermi level is also determined. Our STM measurement provides a direct experimental evidence of the nodal-line state in the family of ZrSiX.

arXiv comment14 pages, 6 figures

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Cited by in corpus (6)

• Topological Semimetals in Square-Net Materials
• Temperature-Induced Lifshitz Transition and Possible Excitonic Instability in ZrSiSe
• Symmetry-selective quasiparticle scattering and electric field tunability of the ZrSiS surface electronic structure
• The study of intrinsic defect state of FeSe with scanning tunneling microscopy
• Quasiparticle interference observation of the topologically non-trivial drumhead surface state in ZrSiTe
• Projective Quasiparticle Interference of a Single Scatterer to Analyze the Electronic Band Structure of ZrSiS