Molecular beam epitaxy growth of superconducting Sr2RuO4 films

Abstract

We report growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to investigate stoichiometry effects on the structural and transport properties. The highest onset transition temperature of about 1.1 K is observed for films grown in a slightly Ru-rich flux condition in order to suppress Ru deficiency. The realization of superconducting Sr2RuO4 films via oxide MBE opens up a new route to study the unconventional superconductivity of this material.

10 pages, 3 figures

References in corpus (2)

• Anomalous Josephson effect in p-wave dirty junctions
• Growth of strontium ruthenate films by hybrid molecular beam epitaxy

Cited by in corpus (6)

• Advances in Complex Oxide Quantum Materials Through New Approaches to Molecular Beam Epitaxy
• Anomalous Enhancement of Upper Critical Field in Sr2RuO4 Thin Films
• Electronic and vibrational signatures of ruthenium vacancies in Sr${}_2$RuO${}_4$ thin films
• Characterization of Sr2RuO4 Josephson junctions made of epitaxial films
• Ferromagnetic state with large magnetic moments realized in epitaxially strained Sr3Ru2O7 films
• Unconventional two-dimensional quantum oscillations in three-dimensional thick SrRuO${}_3$ films