Molecular beam epitaxy growth of superconducting Sr2RuO4 films
arXiv:1903.08629 · doi:10.1063/1.5007342
Abstract
We report growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to investigate stoichiometry effects on the structural and transport properties. The highest onset transition temperature of about 1.1 K is observed for films grown in a slightly Ru-rich flux condition in order to suppress Ru deficiency. The realization of superconducting Sr2RuO4 films via oxide MBE opens up a new route to study the unconventional superconductivity of this material.
arXiv comment10 pages, 3 figures
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- Anomalous Enhancement of Upper Critical Field in Sr2RuO4 Thin Films
- Electronic and vibrational signatures of ruthenium vacancies in SrRuO thin films
- Separated transport relaxation scales and interband scattering in SrRuO, CaRuO, and SrRuO thin films
- Inverse Proximity Effects at Spin-Triplet Superconductor-Ferromagnet Interface
- Identification of Spin-Triplet Superconductivity through a Helical-Chiral Phase Transition in SrRuO Thin-Films
- Quantum Oscillations and the Quasiparticle Properties of Thin Film SrRuO
- Characterization of Sr2RuO4 Josephson junctions made of epitaxial films
- Ferromagnetic state with large magnetic moments realized in epitaxially strained Sr3Ru2O7 films
- Electronic and optical properties of La-doped SrIrO epitaxial thin-films
- Unconventional two-dimensional quantum oscillations in three-dimensional thick SrRuO films