Chiral domain walls of MnSn and their memory
arXiv:1903.03774 · doi:10.1038/s41467-019-10815-8
Abstract
Magnetic domain walls are topological solitons whose internal structure is set by competing energies which sculpt them. In common ferromagnets, domain walls are known to be of either Bloch or Néel types. Little is established in the case of MnSn, a triangular antiferromagnet with a large room-temperature anomalous Hall effect, where domain nucleation is triggered by a well-defined threshold magnetic field. Here, we show that the domain walls of this system generate an additional contribution to the Hall conductivity tensor and a transverse magnetization. The former is an electric field lying in the same plane with the magnetic field and electric current and therefore a planar Hall effect. We demonstrate that in-plane rotation of spins inside the domain wall would explain both observations and the clockwise or anticlockwise chirality of the walls depends on the history of the field orientation and can be controlled.
8 pages, 5 figures, Supplemental Material is included
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- Chiral Spin Textures for Next-Generation Memory and Unconventional Computing
- Distinct quantum anomalous Hall ground states induced by magnetic disorders
- Tuning of topological properties in the strongly correlated antiferromagnet MnSn via Fe doping
- Planar Hall effect caused by the memory of antiferromagnetic domain walls in MnGe
- Dzyaloshinskii-Moriya Induced Spin-Transfer Torques in Kagome Antiferromagnets
- Magnetic interactions in AB-stacked kagome lattices: magnetic structure, symmetry, and duality
- Tuning of Electrical, Magnetic, and Topological Properties of Magnetic Weyl Semimetal MnGe by Fe doping
- Evidence of magnetoelectronic electromagnon mediated transport in flexoelectronic heterostructures
- Unusual Multiple Magnetic Transitions and Anomalous Hall Effect Observed in Antiferromagnetic Weyl Semimetal, MnGe (Ge-rich)