Chiral Spin Textures for Next-Generation Memory and Unconventional Computing
arXiv:2210.15919 · doi:10.1021/acsaelm.2c01023
Abstract
The realization of chiral spin textures - comprising myriad distinct, nanoscale arrangements of spins with topological properties - has established pathways for engineering robust, energy-efficient and scalable elements for non-volatile nanoelectronics. Particularly, current-induced manipulation of spin textures in nanowire racetracks and tunnel junction based devices are actively investigated for applications in memory, logic and unconventional computing. In this article, we paint a background on the progress of spin textures, as well as the relevant state-of-the-art techniques used for their development. In particular, we clarify the competing energy landscape of chiral spin textures, such as skyrmions and chiral domain walls, to tune their size, density and zero-field stability. Next, we discuss the spin texture phenomenology and their response to extrinsic factors arising from geometric constraints, inter-wire interactions and thermal-electrical effects. Finally, we reveal promising chiral spintronic memory and neuromorphic devices, and discuss emerging material and device engineering opportunities.
12 pages, 5 figures
References in corpus (7)
- Advances in the Physics of Magnetic Skyrmions and Perspective for Technology
- Emergent Phenomena Induced by Spin-Orbit Coupling at Surfaces and Interfaces
- Chiral domain walls of MnSn and their memory
- Interfacial current-induced torques in Pt/Co/GdOx
- Visualizing the strongly reshaped skyrmion Hall effect in multilayer wire devices
- Impact of Magnetic Coupling and Density on STT-MRAM Performance
- Intermixing Induced Anisotropy Variations in CoB-based Chiral Multilayer Films