Quantum nanoconstrictions fabricated by cryo-etching in encapsulated graphene
arXiv:1902.07459 · doi:10.1038/s41598-019-50098-z
Abstract
More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in nanostructures based on this material prevents the appearance of truly ballistic electron transport as theo\-re\-tically predicted and, therefore, not well-developed plateaus of conductance have been revealed to date. In this work we report on a novel implementation of the cryo-etching method, which enabled us to fabricate graphene nanoconstrictions encapsulated between hexagonal boron nitride thin films with unprecedented control of the structure edges. High quality smooth nanometer-rough edges are characterized by atomic force microscopy and a clear correlation between low roughness and the existence of well-developed quantized conductance steps with the concomitant occurrence of ballistic transport is found at low temperature. In par\-ti\-cu\-lar, we come upon exact 2 quantization steps of conductance at zero magnetic field due to size quantization, as it has been theoretically predicted for truly ballistic electron transport through graphene nanoconstrictions.
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Cited by in corpus (7)
- Graphene-based quantum Hall interferometer with self-aligned side gates
- Superballistic conduction in hydrodynamic antidot graphene superlattices
- Scattering of topological kink-antikink states in bilayer graphene structures
- Geometry effects in topologically confined bilayer graphene loops
- Conductance of electrostatic wire junctions in bilayer graphene
- Impact of electron-electron interactions on the thermoelectric efficiency of graphene quantum point contacts
- Electrostatic tuning of bilayer graphene edge modes