Marginally Self-Averaging One-Dimensional Localization in Bilayer Graphene
arXiv:1902.07428 · doi:10.1103/PhysRevLett.121.136806
Abstract
The combination of field tunable bandgap, topological edge states, and valleys in the band structure, makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely unexplored. Here we show that the relative fluctuations in ln g with the varying chemical potential, in strongly insulating bilayer graphene (BLG) decay nearly logarithmically for channel length up to L/ 20, where is the localization length. This 'marginal' self averaging, and the corresponding dependence of <ln g> on L, suggest that transport in strongly gapped BLG occurs along strictly one-dimensional channels, where 0.50.1 m was found to be much longer than that expected from the bulk bandgap. Our experiment reveals a nontrivial localization mechanism in gapped BLG, governed by transport along robust edge modes.
This document is the Author's version of a submitted work that was subsequently accepted for publication in Physical Review Letters
References in corpus (6)
- Gate-induced insulating state in bilayer graphene devices
- Room temperature magnetic order on zigzag edges of narrow graphene nanoribbons
- Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
- Edge currents shunt the insulating bulk in gapped graphene
- Charge transport in dual gated bilayer graphene with Corbino geometry
- Current crowding mediated large contact noise in graphene field-effect transistors