paper

Electron Bessel beam diffraction for precise and accurate nanoscale strain mapping

arXiv:1902.06979 · doi:10.1063/1.5096245

Abstract

Strain has a strong effect on the properties of materials and the performance of electronic devices. Their ever shrinking size translates into a constant demand for accurate and precise measurement methods with very high spatial resolution. In this regard, transmission electron microscopes are key instruments thanks to their ability to map strain with sub-nanometer resolution. Here we present a novel method to measure strain at the nanometer scale based on the diffraction of electron Bessel beams. We demonstrate that our method offers a strain sensitivity better than and an accuracy of , competing with, or outperforming, the best existing methods with a simple and easy to use experimental setup.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 114, 243501 (2019) and may be found at https://aip.scitation.org/doi/abs/10.1063/1.5096245 Data available at: https://doi.org/10.5281/zenodo.2566137 and code available at: https://bitbucket.org/lutosensis/tem-thesis/src

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