Grain boundary strengthening of FCC polycrystals

Abstract

The effect of grain size on the flow strength of FCC polycrystals was analyzed by means of computational homogenization. The mechanical behavior of each grain was dictated by a dislocation-based crystal plasticity model in the context of finite strain plasticity and takes into the account the formation of pile-ups at grain boundaries. All the model parameters have a clear physical meaning and were identified for different FCC metals from dislocation dynamics simulations or experiments. It was found that the influence of the grain size on the flow strength of FCC polycrystals was mainly dictated by the similitude coefficient $K$ that establishes the relationship between the dislocation mean free path and the dislocation density in the bulk. Finally, the modelling approach was validated by comparison with experimental results of the effect of grain size on the flow strength of Ni, Al, Cu and Ag.

References in corpus (4)

• The Hall-Petch effect as a manifestation of the general size effect
• Computational Homogenization of Polycrystals
• An analysis of the influence of grain size on the strength of FCC polycrystals by means of computational homogenization
• Scaling Properties of Dislocation Simulations in the Similitude Regime

Cited by in corpus (5)

• Simulation of the Hall-Petch effect in FCC polycrystals by means of strain gradient crystal plasticity and FFT homogenization
• Strengthening of Al-Cu alloys by Guinier-Preston zones: predictions from atomistic simulations
• Can we predict mixed grain boundaries from their tilt and twist components?
• Structures and energies of computed silicon (001) small angle mixed grain boundaries as a function of three macroscopic characters
• On the effect of slip transfer at grain boundaries on the strength of FCC polycrystals