Suppression of the Shear Raman Mode in Defective Bilayer MoS2
arXiv:1812.05543 · doi:10.1063/1.5086366
Abstract
We investigate the effects of lattice disorders on the low frequency Raman spectra of bilayer MoS2. The bilayer MoS2 was subjected to defect engineering by irradiation with a 30 keV He+ ion beam and the induced morphology change was characterized by transmission electron microscopy. With increasing ion dose the shear mode is observed to redshift and it is also suppressed sharply compared to other Raman peaks. We use the linear chain model to describe the changes to the Raman spectra. Our observations suggest that crystallite size and orientation are the dominant factors behind the changes to the Raman spectra.
5 pages, 4 figures in main paper + supplemental
References in corpus (8)
- 2D materials and van der Waals heterostructures
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Mixed-Dimensional van der Waals Heterostructures
- Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material
- Evolution of Interlayer Coupling in Twisted MoS2 Bilayers
- Laser-thinning of MoS2: on demand generation of a single-layer semiconductor
- Observation of interlayer phonon modes in van der Waals heterostructures
- Interlayer bond polarizability model for stacking-dependent low-frequency Raman scattering in layered materials