Optical Transistor for an Amplification of Radiation in a Broadband THz Domain

Abstract

We propose a new type of optical transistor for a broadband amplification of THz radiation. It is made of a graphene--superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin of amplification is the quantum capacitance of graphene. It leads to THz waves amplification, the negative power absorption, and as a result, the system yields positive gain, and the hybrid acts like an optical transistor, operating with the terahertz light. It can, in principle, amplify even a whole spectrum of chaotic signals (or noise), that is required for numerous biological applications.

7 pages, 3 figures

References in corpus (9)

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• Dynamical polarization of graphene at finite doping
• Interaction phenomena in graphene seen through quantum capacitance
• Stimulated emission of terahertz radiation by semiconductor microcavities
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• Terahertz emitters and detectors based on carbon nanotubes
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Cited by in corpus (10)

• Photogalvanic transport in fluctuating Ising superconductors
• Theory of BCS-like bogolon-mediated superconductivity in transition metal dichalcogenides
• Proposal for Plasmon Spectroscopy of Fluctuations in Low-Dimensional Superconductors
• Coherent photogalvanic effect in fluctuating superconductors
• Photoinduced Anomalous Supercurrent Hall Effect
• Strong-coupling theory of condensate-mediated superconductivity in 2D materials
• Proposal for Superconducting Photodiode
• Electrically small matched antennas with time-periodic and space-uniform modulation
• Interplay between collective modes in hybrid electron gas-superconductor structures
• On-chip visible light communication-band metasurface modulators with niobium plasmonic nano-antenna arrays