Stimulated emission of terahertz radiation by semiconductor microcavities
arXiv:1009.0642 · doi:10.1063/1.3519978
Abstract
We show that planar semiconductor microcavities in the strong coupling regime can be used as sources of stimulated terahertz (THz) radiation. Emitted THz photons would have a frequency of the spliting of the cavity polariton modes. The optical transition between upper and lower polariton branches is allowed due to mixing of the upper polariton state with one of excited exciton states. This transition is stimulated in the polariton laser regime.
3 pages, submitted to Appl. Phys. Lett
References in corpus (1)
Cited by in corpus (6)
- Terahertz emission from multiple-microcavity exciton-polariton lasers
- Giant Photonic Response of Mexican-hat Topological Semiconductors for Mid-infrared to THz Applications
- Nonlinear spectroscopy of exciton-polaritons in a GaAs-based microcavity
- Bose condensation of upper-branch exciton-polaritons in a transferrable microcavity
- Terahertz emission from AC Stark-split asymmetric intersubband transitions
- Terahertz Spectroscopy of Semiconductor Microcavity Lasers I: Photon Lasers