Terahertz emission from multiple-microcavity exciton-polariton lasers

Abstract

Terahertz emission between exciton-polariton branches in semiconductor microcavities is expected to be strongly stimulated in the polariton laser regime, due to the high density of particles in the lower state (final state stimulation effect). However, non-radiative scattering processes depopulate the upper state and greatly hinder the efficiency of such terahertz sources. In this work, we suggest a new scheme using multiple microcavities and exploiting the transition between two interband polariton branches located below the exciton level. We compare the non-radiative processes loss rates in single and double cavity devices and we show that a dramatic reduction can be achieved in the latter, enhancing the efficiency of the terahertz emission.

References in corpus (4)

• Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities
• Vertical cavity surface emitting terahertz laser
• Terahertz lasing from intersubband polariton-polariton scattering in asymmetric quantum wells
• Stimulated emission of terahertz radiation by semiconductor microcavities

Cited by in corpus (6)

• Adiabatic preparation of a cold exciton condensate
• Phonon mediated conversion of exciton-polaritons Rabi oscillation into THz radiation
• Semiconductor quantum well irradiated by a two-mode electromagnetic field as a terahertz emitter
• On the possibility of a terahertz light emitting diode based on a dressed quantum well
• Terahertz cascades from nanoparticles
• Terahertz Spectroscopy of Semiconductor Microcavity Lasers I: Photon Lasers