On the possibility of a terahertz light emitting diode based on a dressed quantum well

Abstract

We consider theoretically the realization of a tunable terahertz light emitting diode from a quantum well with dressed electrons placed in a highly doped p-n junction. In the considered system the strong resonant dressing field forms dynamic Stark gaps in the valence and conduction bands and the electric field inside the p-n junction makes the QW asymmetric. It is shown that the electrons transiting through the light induced Stark gaps in the conduction band emit photons with energy directly proportional to the dressing field. This scheme is tunable, compact, and shows a fair efficiency.

6 pages, 5 figures

References in corpus (6)

• Optical properties of metal-dielectric-metal microcavities in the THz frequency range
• Periodic array of quantum rings strongly coupled to circularly polarized light as a topological insulator
• Terahertz emission from multiple-microcavity exciton-polariton lasers
• Optically induced Aharonov-Bohm effect in mesoscopic rings
• Persistent current induced by quantum light
• Terahertz emission from AC Stark-split asymmetric intersubband transitions

Cited by in corpus (2)

• Many-Body Effects and Optical Properties of Single- and Double Layer $\alpha$-${\mathcal{T}}_3$ Lattices
• Terahertz Spectroscopy of Semiconductor Microcavity Lasers I: Photon Lasers