Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

Abstract

Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, which have a high degree of crystallinity and outstanding electrical and optical properties, using molecular-beam epitaxy by controlling catalyst alloy segregation. In our approach, two-dimensional InAs nanosheets can be obtained directly from one-dimensional InAs nanowires by silver-indium alloy segregation, which is much easier than all previously reported method, such as traditional buffering technique and select area epitaxial growth. Detailed transmission electron microscopy investigations provide a solid evidence that the catalyst alloy segregation is the origination of the InAs dimensional transformation from one-dimensional nanowires to two-dimensional nanosheets, and even to three-dimensional complex crosses. Using this method, we find that the wafer-scale free-standing InAs nanosheets can be grown on various substrates including Si, MgO, sapphire and GaAs etc. The InAs nanosheets grown at high temperature are pure phase single crystals and have a high electron mobility and a long time-resolved THz kinetics lifetime. Our work will open up a conceptually new and general technology route toward the effective controlling the dimension of the low-dimensional III-V semiconductors. It may also enable the low-cost fabrication of free-standing nanosheet-based devices on an industrial scale.

arXiv comment18 pages,8 figures

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Cited by in corpus (7)

• Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy
• Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions
• Measurements of spin-orbit interaction in epitaxially grown InAs nanosheets
• Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
• Post-growth shaping and transport anisotropy in 2D InAs nanofins
• Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
• Electrically tunable spin-orbit interaction in an InAs nanosheet