Charging of a Single InAs QD with Electrically-Injected Holes using a Lateral Electric Field

Abstract

InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and have long been of interest for incorporation into quantum optoelectronic devices ranging from single photon sources to multi-bit quantum computers. The properties of single QDs, or carriers confined within those QDs, can be tuned by external electric fields, which provides an important tool for the development of scalable and tunable devices. Deterministic charging of a QD with a single electron or hole is an important tool for quantum devices and is well-established under the application of growth-direction electric fields in a diode structure. Here, we report a new charging mechanism for a single QD in a 3-electrode device that does not contain a vertical diode and can be used to control electric field profiles in two dimensions. We fabricate the device with E-beam lithography and characterize photoluminescence from single QDs under different bias configurations. Using a combination of experimental data and COMSOL band structure calculations, we explain how the charging originates in the electrical-injection of holes induced by lateral electric fields. We discuss the applications for this device and the potential for full 2-D electric field control of a single QD and QDM.

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