Tunable inverse spin Hall effect in nanometer-thick platinum films by ionic gating
arXiv:1810.06873 · doi:10.1038/s41467-018-05611-9
Abstract
Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO3, the paramagnet-ferromagnet transition in (In,Mn)As and so on. The key to such modulation is charge accumulation in solids. Thus, it has been believed that such modulation is out of reach for conventional metals where the number of carriers is too large. However, success in tuning the Curie temperature of ultrathin cobalt gave hope of finally achieving such degree of control even in metallic materials. Here, we show reversible modulation of up to two orders of magnitude of the inverse spin Hall effect - a phenomenon that governs interconversion between spin and charge currents - in ultrathin platinum. Spin-to-charge conversion enables the generation and use of electric and spin currents in the same device, which is crucial for the future of spintronics and electronics.
arXiv comment18 pages, 6 figures
References in corpus (21)
- Enhanced Gilbert Damping in Thin Ferromagnetic Films
- Direct electronic measurement of the spin Hall effect
- Study of Intrinsic Spin Hall Effect and Orbital Hall Effect in 4d- and 5d- Transition Metals
- Scaling of spin Hall angle in 3d, 4d and 5d metals from Y3Fe5O12/metal spin pumping
- Spin-Orbit Proximity Effect in Graphene
- Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces
- Spin torque study of the spin Hall conductivity and spin diffusion length in platinum thin films with varying resistivity
- Intrinsic spin Hall effect in platinum metal
- Fermi level dependent charge-to-spin current conversion by Dirac surface state of topological insulators
- Indication of intrinsic spin Hall effect in 4d and 5d transition metals
- Giant Orbital Hall Effect in Transition Metals: Origin of Large Spin and Anomalous Hall Effects
- Spin-orbit torque engineering via oxygen manipulation
- Tuning the spin Hall effect of Pt from the moderately dirty to the superclean regime
- Determination of intrinsic spin Hall angle in Pt
- Evolution of the spin Hall effect in Pt nanowires: Size and temperature effects
- Observation of inverse spin Hall effect in bismuth selenide
- Gate-tunable spin-charge conversion and a role of spin-orbit interaction in graphene
- Large conductance modulation of gold thin films by huge charge injection via electrochemical gating
- Study of intrinsic spin and orbital Hall effects in Pt based on a (6s, 6p, 5d) tight-binding model
- Spin orbit coupling controlled spin pumping effect
- Huge field-effect surface charge injection and conductance modulation in metallic thin films by electrochemical gating
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- Gigantic Anisotropy of Self-Induced Spin-Orbit Torque in Weyl Ferromagnet Co2MnGa
- Electrical control of spin mixing conductance in a YFeO/Platinum bilayer
- Spin-current-related magnetoresistance in epitaxial Pt/Co bilayers in the presence of spin Hall effect and Rashba-Edelstein effect
- Sizable spin-transfer torque in Bi/Ni80Fe20 bilayer film
- Modulation of Hanle magnetoresistance in an ultrathin platinum film by ionic gating
- Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High- Dielectric Layer
- Magnetoelectric torque and edge currents caused by spin-orbit coupling
- Facile synthesis of palladium hydride via ionic gate-driven protonation using a deep eutectic solvent
- Hysteresis and training effect in the electric control of spin current in Pt/Y3Fe5O12 heterostructures
- Temperature dependence of charge-to-spin conversion in rhombohedral (110) bismuth thin film