Size dependence of spin-torque switching in perpendicular magnetic tunnel junctions
arXiv:1809.03353 · doi:10.1063/1.5055741
Abstract
We simulate the spin torque-induced reversal of the magnetization in thin disks with perpendicular anisotropy at zero temperature. Disks typically smaller than 20 nm in diameter exhibit coherent reversal. A domain wall is involved in larger disks. We derive the critical diameter of this transition. Using a proper definition of the critical voltage, a macrospin model can account perfectly for the reversal dynamics when the reversal is coherent. The same critical voltage appears to match with the micromagnetics switching voltage regardless of the switching path.
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- Magnetic Droplet Solitons
- A Perspective on Electrical Generation of Spin Current for Magnetic Random Access Memories
- Thermal effects in spin torque switching of perpendicular magnetic tunnel junctions at cryogenic temperatures
- Spin-torque switching mechanisms of perpendicular magnetic tunnel junctions nanopillars
- Stochastic processes in magnetization reversal involving domain wall motion in magnetic memory elements
- Spin-torque induced wall motion in perpendicularly magnetized discs: ballistic versus oscillatory behavior
- Micromagnetic instabilities in spin-transfer switching of perpendicular magnetic tunnel junctions