40 citations · 196 across the 13 of their papers we have counts for
13 papers
A quantum sensing metrology for magnetic memories
Vicent J Borràs, Robert Carpenter, Liza Žaper +5
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling…
Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current
Vaishnavi Kateel, Viola Krizakova, Siddharth Rao +10
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memo…
Tailoring the switching efficiency of magnetic tunnel junctions by the fieldlike spin-orbit torque
Viola Krizakova, Marco Hoffmann, Vaishnavi Kateel +5
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of…
Spin-torque induced wall motion in perpendicularly magnetized discs: ballistic versus oscillatory behavior
Paul Bouquin, Joo-Von Kim, Olivier Bultynck +4
We use time-resolved measurement and modeling to study the spin-torque induced motion of a domain wall in perpendicular anisotropy magnets. In disc of diameters between 70 and 100…
Impact of Magnetic Coupling and Density on STT-MRAM Performance
Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil +3
As a unique mechanism for MRAMs, magnetic coupling needs to be accounted for when designing memory arrays. This paper models both intra- and inter-cell magnetic coupling analytical…
Stochastic processes in magnetization reversal involving domain wall motion in magnetic memory elements
Paul Bouquin, Joo-Von Kim, Olivier Bultynck +4
We show experimentally through time-resolved conductance measurements that magnetization reversal through domain wall motion in sub-100 nm diameter magnetic tunnel junctions is dom…
Survey on STT-MRAM Testing: Failure Mechanisms, Fault Models, and Tests
Lizhou Wu, Mottaqiallah Taouil, Siddharth Rao +2
As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research atten…
Effect of Tantalum spacer thickness and deposition conditions on the properties of MgO/CoFeB/Ta/CoFeB/MgO free layers
T. Devolder, S. Couet, J. Swerts +3
To get stable perpendicularly magnetized tunnel junctions at small device dimensions, composite free layers that comprise two MgO/FeCoB interfaces as sources of interface anisotrop…
Size dependence of spin-torque switching in perpendicular magnetic tunnel junctions
Paul Bouquin, Siddharth Rao, Gouri Sankar Kar +1
We simulate the spin torque-induced reversal of the magnetization in thin disks with perpendicular anisotropy at zero temperature. Disks typically smaller than 20 nm in diameter ex…
Material developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells
Thibaut Devolder, Joo-Von Kim, J. Swerts +6
We investigate the Gilbert damping and the magnetization switching of perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions adequate for spin-torque opera…
Time-resolved imaging of pulse-induced magnetization reversal with a microwave assist field
Siddharth Rao, Jan Rhensius, Andre Bisig +5
The reversal of the magnetization under the influence of a field pulse has been previously predicted to be an incoherent process with several competing phenomena such as domain wal…
Spin wave non-reciprocity and beating in permalloy by time-resolved magneto-optical Kerr effect
Siddharth Rao, Jungbum Yoon, Jan Rhensius +2
We have studied the propagation characteristics of spin wave modes in a permalloy stripe by time-resolved magneto-optical Kerr effect techniques. We observe a beating interference…
Electrical detection of microwave assisted magnetization reversal by spin pumping
Siddharth Rao, Sankha Subhra Mukherjee, Mehrdad Elyasi +2
Microwave assisted magnetization reversal has been investigated in a bilayer system of Pt/ferromagnet by detecting a change in the polarity of the spin pumping signal. The reversal…