18 citations · 34 across the 3 of their papers we have counts for
7 papers
Spin-torque induced wall motion in perpendicularly magnetized discs: ballistic versus oscillatory behavior
Paul Bouquin, Joo-Von Kim, Olivier Bultynck +4
We use time-resolved measurement and modeling to study the spin-torque induced motion of a domain wall in perpendicular anisotropy magnets. In disc of diameters between 70 and 100…
Impact of Magnetic Coupling and Density on STT-MRAM Performance
Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil +3
As a unique mechanism for MRAMs, magnetic coupling needs to be accounted for when designing memory arrays. This paper models both intra- and inter-cell magnetic coupling analytical…
Stochastic processes in magnetization reversal involving domain wall motion in magnetic memory elements
Paul Bouquin, Joo-Von Kim, Olivier Bultynck +4
We show experimentally through time-resolved conductance measurements that magnetization reversal through domain wall motion in sub-100 nm diameter magnetic tunnel junctions is dom…
Survey on STT-MRAM Testing: Failure Mechanisms, Fault Models, and Tests
Lizhou Wu, Mottaqiallah Taouil, Siddharth Rao +2
As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research atten…
Effect of Tantalum spacer thickness and deposition conditions on the properties of MgO/CoFeB/Ta/CoFeB/MgO free layers
T. Devolder, S. Couet, J. Swerts +3
To get stable perpendicularly magnetized tunnel junctions at small device dimensions, composite free layers that comprise two MgO/FeCoB interfaces as sources of interface anisotrop…
Size dependence of spin-torque switching in perpendicular magnetic tunnel junctions
Paul Bouquin, Siddharth Rao, Gouri Sankar Kar +1
We simulate the spin torque-induced reversal of the magnetization in thin disks with perpendicular anisotropy at zero temperature. Disks typically smaller than 20 nm in diameter ex…