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20142023
most citedField-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

40 citations · 196 across the 13 of their papers we have counts for

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cond-mat.mtrl-sci2017★ 35 cited

Material developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells

Thibaut Devolder, Joo-Von Kim, J. Swerts +6

We investigate the Gilbert damping and the magnetization switching of perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions adequate for spin-torque opera…