Quantum Interference Control of Carriers and Currents in Zincblende Semiconductors based on Nonlinear Absorption Processes
arXiv:1808.06673 · doi:10.1103/PhysRevB.100.075202
Abstract
Quantum interference between optical absorption processes can excite carriers with a polarized distribution in the Brillouin zone depending on properties of the incident optical fields. The polarized distribution of carriers introduces a current that can be controlled by the phases and polarizations of the incident optical fields. Here we study the quantum interference of 2- and 3-photon absorption processes in AlGaAs. We present theoretical predictions for carrier and current injection rates considering different frequencies, phases, and polarizations of the incident fields. We also discuss the important features that result from only nonlinear optical processes being involved, which leads for instance to a sharper distribution of carriers in the Brillouin zone.
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Cited by in corpus (5)
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- Quantum interference between the optical Stark effect and resonant harmonic generation in WS2
- Quantum Interference Control of Localized Carrier Distributions in the Brillouin Zone
- Two-dimensional spectroscopy of open quantum systems
- Directional Photocurrent Generated by Quantum Interference Control