Quantum Interference Control of Photocurrents in Semiconductors by Nonlinear Optical Absorption Processes

Abstract

We report experiments demonstrating Quantum Interference Control (QuIC) based on two nonlinear optical absorption processes in semiconductors. We use two optical beams of frequencies $\omega$ and $3\omega /2$ incident on AlGaAs and measure the injection current due to the interference between 2- and 3-photon absorption processes. We analyze the dependence of the injection current on the intensities and phases of the incident fields.

References in corpus (8)

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• Coherent control of injection currents in high-quality films of Bi2Se3
• Coherent control of optical injection of spin and currents in topological insulators
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• Quantum Interference Control of Carriers and Currents in Zincblende Semiconductors based on Nonlinear Absorption Processes
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Cited by in corpus (8)

• Electric field induced injection and shift currents in zigzag graphene nanoribbons
• Quantum Interference Control of Carriers and Currents in Zincblende Semiconductors based on Nonlinear Absorption Processes
• Quantum Interference Control of Localized Carrier Distributions in the Brillouin Zone
• Quantum interference between the optical Stark effect and resonant harmonic generation in WS2
• Radio frequency polarization modulation based on an optical frequency comb
• Two-dimensional spectroscopy of open quantum systems
• Directional Photocurrent Generated by Quantum Interference Control
• Theory of the two-photon Franz-Keldysh effect and electric-field-induced bichromatic coherent control