Nanopore fabrication and characterization by helium ion microscopy

Abstract

The Helium Ion Microscope (HIM) has the capability to image small features with a resolution down to 0.35 nm due to its highly focused gas field ionization source and its small beam-sample interaction volume. In this work, the focused helium ion beam of a HIM is utilized to create nanopores with diameters down to 1.3 nm. It will be demonstrated that nanopores can be milled into silicon nitride, carbon nanomembranes (CNMs) and graphene with well-defined aspect ratio. To image and characterize the produced nanopores, helium ion microscopy and high resolution scanning transmission electron microscopy were used. The analysis of the nanopore's growth behavior, allows inferring on the profile of the helium ion beam.

References in corpus (6)

• Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
• Graphene: A sub-nanometer trans-electrode membrane
• An accurate measurement of electron beam induced displacement cross sections for single-layer graphene
• Helium Ion Microscopy
• One nanometer thin carbon nanosheets with tunable conductivity and stiffness
• Understanding the interaction between energetic ions and freestanding graphene towards practical 2D perforation

Cited by in corpus (11)

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• Enhancing thermoelectric properties of isotope graphene nanoribbons via machine learning guided manipulation of disordered antidots and interfaces
• Time-Resolved Focused Ion Beam Microscopy: Modeling, Estimation Methods, and Analyses
• Nanometer resolution mask lithography with matter waves: Near-field binary holography
• Angular magnetic-field dependence of vortex matching in pinning lattices fabricated by focused or masked helium ion beam irradiation of superconducting YBa${}_2$Cu${}_3$O${}_{7-\delta }$ thin films
• Electron Beam-Induced Nanopores in Bernal-Stacked Hexagonal Boron Nitride
• Near-Surface Electrical Characterisation of Silicon Electronic Devices Using Focused keV Ions
• Nanostructured Superconductors
• Denoising Particle Beam Micrographs with Plug-and-Play Methods
• Study of Surface Damage in Silicon by Irradiation with Focused Rubidium Ions